X-On Electronics has gained recognition as a prominent supplier of A1C15S12M3-F IGBT Modules across the USA, India, Europe, Australia, and various other global locations. A1C15S12M3-F IGBT Modules are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

A1C15S12M3-F STMicroelectronics

A1C15S12M3-F electronic component of STMicroelectronics
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Part No.A1C15S12M3-F
Manufacturer: STMicroelectronics
Category: IGBT Modules
Description: IGBT Modules PTD NEW MAT & PWR SOLUTION
Datasheet: A1C15S12M3-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
18: USD 49.349 ea
Line Total: USD 888.28 
Availability - 0
MOQ: 18  Multiples: 18
Pack Size: 18
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 18
Multiples : 1
18 : USD 55.8306
25 : USD 53.109
50 : USD 52.731
100 : USD 52.353
250 : USD 51.975
500 : USD 51.5844
1000 : USD 51.1938
2500 : USD 50.8032
5000 : USD 50.4126
10000 : USD 50.022

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 18
Multiples : 18
18 : USD 49.349

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 55.8715

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

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A1C15S12M3-F Datasheet ACEPACK 1 converter inverter brake, 1200 V, 15 A, trench gate field stop M series IGBT with soft diode and NTC Features ACEPACK 1 power module DBC Cu Al O Cu 2 3 Converter inverter brake topology 1600 V, very low drop rectifiers for converter 1200 V, 15 A IGBTs and diodes Soft and fast recovery diode Integrated NTC ACEPACK 1 Applications Inverters Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK 1 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status link A1C15S12M3-F Product summary Order code A1C15S12M3-F Marking A1C15S12M3-F Package ACEPACK 1 Leads type Press fit contact pins DS10963 - Rev 7 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.A1C15S12M3-F Electrical ratings 1 Electrical ratings 1.1 Inverter stage Limiting values at T = 25 C, unless otherwise specified. J 1.1.1 IGBTs Table 1. Absolute maximum ratings of the IGBTs, inverter stage Symbol Description Value Unit V Collector-emitter voltage (V = 0) 1200 V CES GE I Continuous collector current at T = 100 C 15 A C C (1) I Pulsed collector current (t = 1 ms) 30 A p CP V Gate-emitter voltage 20 V GE P Total power dissipation of each IGBT (T = 25 C, T = 175 C) 142.8 W TOT C J T Maximum junction temperature 175 C JMAX T Operating junction temperature range under switching conditions -40 to 150 C Jop 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBTs, inverter stage Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter breakdown V I = 1 mA, V = 0 V 1200 V (BR)CES C GE voltage V = 15 V, I = 15 A 1.95 2.45 V GE C V Collector-emitter saturation CE(sat) voltage (terminal) V = 15 V, I = 15 A, T = 150 C 2.3 V GE C J V V = V , I = 1 mA Gate threshold voltage 5 6 7 V GE(th) CE GE C I V = 0 V, V = 1200 V Collector cut-off current 100 A CES GE CE I V = 0 V, V = 20 V Gate-emitter leakage current 500 nA GES CE GE C Input capacitance 985 pF ies C V = 25 V, f = 1 MHz, V = 0 V Output capacitance 118 pF oes CE GE C Reverse transfer capacitance 40 pF res Q V = 960 V, I = 15 A, V = 15 V Total gate charge 71 nC g CC C GE t Turn-on delay time 120 ns d(on) V = 600 V, I = 15 A, R = 22 , CC C G t Current rise time 14.5 ns r V = 15 V, di/dt = 820 A/s GE (1) E Turn-on switching energy 0.59 mJ on t Turn-off delay time 115 ns d(off) V = 600 V, I = 15 A, CC C t Current fall time R = 22 , V = 15 V, 84 ns f G GE (2) dv/dt = 8200 V/s E Turn-off switching energy 0.83 mJ off DS10963 - Rev 7 page 2/20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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