Technische Information / Technical Information IGBT-Modul FF300R12KS4P IGBT-Module 62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten und bereits aufgetragenem Thermal Interface Material 62mm C-Series module with the fast IGBT2 for high-frequency switching and pre-applied Thermal Interface Material Vorlufige Daten / Preliminary Data V = 1200V CES I = 300A / I = 600A C nom CRM Typische Anwendungen Typical Applications Anwendungen fr Resonanz Umrichter Resonant inverter applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application Medizinische Anwendungen Medical applications Motorantriebe Motor drives Servoumrichter Servo drives USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Hohe Kurzschlussrobustheit High short-circuit capability Niedrige Schaltverluste Low switching losses Sehr groe Robustheit Unbeatable robustness V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AKB date of publication: 2016-03-09 approved by: MK revision: V2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FF300R12KS4P IGBT-Module Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 25C, T = 150C I 300 A H vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 600 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 300 A, V = 15 V T = 25C 3,20 3,75 V C GE vj VCE sat Collector-emitter saturation voltage I = 300 A, V = 15 V T = 125C 3,85 V C GE vj Gate-Schwellenspannung I = 12,0 mA, V = V , T = 25C V 4,50 5,50 6,50 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 3,20 C Gate charge Interner Gatewiderstand T = 25C R 1,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 20,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,40 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 300 A, V = 600 V T = 25C 0,10 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,11 s R = 3,0 Gon Anstiegszeit, induktive Last I = 300 A, V = 600 V T = 25C 0,06 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,07 s R = 3,0 Gon Abschaltverzgerungszeit, induktive Last I = 300 A, V = 600 V T = 25C 0,53 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,55 s R = 3,0 Goff Fallzeit, induktive Last I = 300 A, V = 600 V T = 25C 0,03 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 3,0 Goff Einschaltverlustenergie pro Puls I = 300 A, V = 600 V, L = 60 nH T = 25C mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5000 A/s Tvj = 125C Eon 25,0 mJ R = 3,0 Gon Abschaltverlustenergie pro Puls I = 300 A, V = 600 V, L = 60 nH T = 25C mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 7500 V/s Tvj = 125C Eoff 15,0 mJ R = 3,0 Goff Kurzschluverhalten V 15 V, V = 900 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 125C 2000 A Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT R 0,0860 K/W thJH Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: AKB date of publication: 2016-03-09 approved by: MK revision: V2.0 2