FS100R12W2T7 B11 EasyPACK Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und PressFIT / NTC EasyPACK module with TRENCHSTOPIGBT7 and Emitter Controlled 7 diode and PressFIT / NTC Vorlufige Daten / Preliminary Data J V = 1200V CES I = 100A / I = 200A C nom CRM Potentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Klimaanlagen Air conditioning Motorantriebe Motor drives Servoumrichter Servo drives USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Niedriges V Low V CEsat CEsat TM TM Trenchstop IGBT7 Trenchstop IGBT7 berlastbetrieb bis zu 175C Overload operation up to 175C Mechanische Eigenschaften Mechanical Features 2,5 kV AC 1min Isolationsfestigkeit 2.5 kV AC 1min insulation Al O Substrat mit kleinem thermischen Al O substrate with low thermal resistance 2 3 2 3 Widerstand Hohe Leistungsdichte High power density Kompaktes Design Compact design PressFIT Verbindungstechnik PressFIT contact technology Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 www.infineon.com 2018-12-03FS100R12W2T7 B11 Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Implementierter Kollektor-Strom ICN 100 A Implemented collector current Kollektor-Dauergleichstrom T = 65C, T = 175C I 70 A H vj max CDC Continuous DC collector current Periodischer Kollektor-Spitzenstrom tP = 1 ms ICRM 200 A Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 100 A T = 25C 1,50 t.b.d. V C vj Collector-emitter saturation voltage VGE = 15 V Tvj = 125C VCE sat 1,64 V T = 175C 1,72 V vj Gate-Schwellenspannung I = 4,00 mA, V = V , T = 25C V 5,15 5,80 6,45 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 / 15 V, VCE = 600 V QG 1,80 C Gate charge Interner Gatewiderstand T = 25C R 1,5 vj Gint Internal gate resistor Eingangskapazitt f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 21,7 nF Input capacitance Rckwirkungskapazitt f = 100 kHz, T = 25C, V = 25 V, V = 0 V C 0,075 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 0,009 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,15 s C CE vj td on Turn-on delay time, inductive load VGE = -15 / 15 V Tvj = 125C 0,168 s R = 1,8 T = 175C 0,175 s Gon vj Anstiegszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,04 s C CE vj tr Rise time, inductive load V = -15 / 15 V T = 125C 0,044 s GE vj R = 1,8 T = 175C 0,046 s Gon vj Abschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,29 s C CE vj td off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,37 s GE vj R = 1,8 T = 175C 0,405 s Goff vj Fallzeit, induktive Last I = 100 A, V = 600 V T = 25C 0,10 s C CE vj tf Fall time, inductive load V = -15 / 15 V T = 125C 0,19 s GE vj R = 1,8 T = 175C 0,25 s Goff vj Einschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 35 nH T = 25C 5,00 mJ C CE vj Turn-on energy loss per pulse di/dt = 2200 A/s (T = 175C) T = 125C E 6,60 mJ vj vj on V = -15 / 15 V, R = 1,8 T = 175C 7,80 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 35 nH T = 25C 6,20 mJ C CE vj Turn-off energy loss per pulse du/dt = 2800 V/s (T = 175C) T = 125C E 9,90 mJ vj vj off V = -15 / 15 V, R = 1,8 T = 175C 12,6 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 800 V t 8 s, T = 150C 370 A GE CC P vj ISC SC data V = V -L di/dt t 7 s, T = 175C 350 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT R 0,750 K/W thJH Thermal resistance, junction to heatsink Temperatur im Schaltbetrieb Tvj op -40 175 C Temperature under switching conditions Datasheet 2 V 2.1 2018-12-03