BD237 STMicroelectronics

BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications 1 Audio, power linear and switching applications 2 3 SOT-32 Description (TO-126) The devices are manufactured in Planar technology with Base Island layout. The Figure 1. Internal schematic diagram resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238. Table 1. Device summary Order codes Marking Package Packaging BD235 BD235 SOT-32 Tube BD237 BD237 SOT-32 Tube June 2009 Doc ID 4189 Rev 3 1/9 www.st.com 9 Absolute maximum ratings BD235, BD237 1 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit BD235 BD237 V Collector-base voltage (I = 0) 60 100 V CBO E V Collector-emitter voltage (R = 1 k) 60100V CER BE V Collector-emitter voltage (I = 0) 60 80 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 2 A C I Collector peak current (t < ms) 6 A CM p P Total dissipation at T = 25C 25 W TOT case T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J 2/9 Doc ID 4189 Rev 3