BD239C STMicroelectronics

BD239C NPN power transistor Features NPN transistor Applications General purpose switching and amplifier transistor 3 Description 2 1 The device is manufactured in Planar technology TO-220 with Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is the BD240C. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging BD239C BD239C TO-220 Tube July 2007 Rev 2 1/9 www.st.com 9Electrical ratings BD239C 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-emitter voltage (R = 100) 115 V CER BE V Collector-base voltage (I = 0) 100 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 2 A C I Collector peak current 4 A CM I Base current 0.6 A B P Total dissipation at T 25C 30 W TOT case P Total dissipation at T 25C 2 W TOT amb T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J 2/9