X-On Electronics has gained recognition as a prominent supplier of BD435 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BD435 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BD435 STMicroelectronics

BD435 electronic component of STMicroelectronics
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Part No.BD435
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Medium Power
Datasheet: BD435 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 0.392 ea
Line Total: USD 11.76 
Availability - 0
MOQ: 30  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 1
30 : USD 0.392
1250 : USD 0.3627

   
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RoHS - XON
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We are delighted to provide the BD435 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BD435 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 1 2 The BD433 is especially suitable for use in 3 car-radio output stages. The complementary PNP types are BD434, SOT-32 BD436, and BD438 respectively. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD433 BD435 BD437 PNP BD434 BD436 BD438 V Collector-Base Voltage (I = 0) 22 32 45 V CBO E V Collector-Emitter Voltage (V = 0) 22 32 45 V CES BE V Collector-Emitter Voltage (I = 0) 22 32 45 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 4 A C I 7A CM Collector Peak Current (t 10 ms) I Base Current 1 A B o P 36 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/4 February 2003 BD433 BD434 BD435 BD436 BD437 BD438 THERMAL DATA o R Thermal Resistance Junction-case Max 3.5 C/W thj-case o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BD433/434 V = 22 V 100 A CBO CB Current (I = 0) for BD435/436 V = 32 V 100 A E CB for BD437/438 V = 45 V 100 A CB I Collector Cut-off for BD433/434 V = 22 V 100 A CES CE Current (V = 0) for BD435/436 V = 32 V 100 A BE CE for BD437/438 V = 45 V 100 A CE I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C V * Collector-Emitter I = 100 mA for BD433/434 22 V CEO(sus) C Sustaining Voltage for BD435/436 32 V (I = 0) for BD437/438 45 V B V * Collector-Emitter I = 2 A I = 0.2 A CE(sat) C B Saturation Voltage for BD433/434 0.2 0.5 V for BD435/436 0.2 0.5 V for BD437/438 0.2 0.6 V V * Base-Emitter Voltage I = 10 mA V = 5 V 0.58 V BE C CE I = 2 A V = 1 V C CE for BD433/434 1.1 V for BD435/436 1.1 V for BD437/438 1.2 V h * DC Current Gain I = 10 mA V = 5 V FE C CE for BD433/434 40 130 for BD435/436 40 130 for BD437/438 30 130 I = 500 mA V = 1 V 85 140 C CE IC = 2 A VCE = 1 V for BD433/434 50 for BD435/436 50 for BD437/438 40 h /h * Matched Pair I = 500 mA V = 1 V 1.4 FE1 FE2 C CE f Transition frequency I = 250 mA V = 1 V 3 MHz T C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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