BD711 STMicroelectronics

BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec 3 2 TO-220 plastic package. They are intented for 1 use in power linear and switching applications. The BD707 and BD711 complementary PNP TO-220 types are BD708 and BD712 respectively. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD707 BD709 BD711 PNP BD708 BD712 V Collector-Base Voltage (I = 0) 60 80 100 V CBO E V Collector-Emitter Voltage (V = 0) 60 80 100 V CER BE V Collector-Emitter Voltage (I = 0) 60 80 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 12 A C I Collector Peak Current 18 A CM I Base Current 5 A B o P 75 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative 1/6 September 1999 Obsolete Product(s) - Obsolete Product(s)BD707/708/709/711/712 THERMAL DATA o R Thermal Resistance Junction-case Max 1.67 C/W thj-case o R Thermal Resistance Junction-ambient Max 70 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BD707/708 V = 60 V 100 A CBO CB Current (I = 0) for BD709 V = 80 V 100 A E CB BD711/712 for V = 100 V 100 A CB o T = 150 C case for BD707/708 V = 60 V 1 mA CB for BD709 V = 80 V 1 mA CB for BD711/712 V = 100 V 1 mA CB I Collector Cut-off for BD707/708 V = 30 V 100 mA CEO CE Current (I = 0) for BD709 V = 40 V 100 mA B CE for BD711/712 V = 50 V 100 mA CE I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C V * Collector-Emitter I = 100 mA CEO(sus) C Sustaining Voltage for BD707/708 60 V (I = 0) for BD709 80 V B for BD711/712 100 V V * Collector-Emitter I = 4 A I = 0.4 A 1 V CE(sat) C B Saturation Voltage V * Knee Voltage I = 3 A I = ** 0.4 V CEK C B V * Base-Emitter Voltage I = 4 A V = 4 V 1.5 V BE C CE h * DC Current Gain I = 0.5 A V = 2 V 40 120 400 FE C CE I = 2 A V = 2 V C CE BD707/708 for 30 for BD709 30 IC = 4 A VCE = 4 V 15 150 I = 10 A V = 4 V C CE for BD707/708 5 10 for BD709 8 for BD711/712 8 f Transition frequency I = 300 mA V = 3 V 3 MHz T C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % ** Value for which IC = 3.3 A at VCE = 2V. For PNP types voltage and current values are negative. 2/6 Obsolete Product(s) - Obsolete Product(s)