X-On Electronics has gained recognition as a prominent supplier of BD911 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BD911 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BD911 STMicroelectronics

BD911 electronic component of STMicroelectronics
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See Product Specifications
Part No.BD911
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 100V; 15A; 90W; TO220AB
Datasheet: BD911 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
19: USD 0.7475 ea
Line Total: USD 14.2 
Availability - 14474
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ: 19  Multiples: 1
Pack Size: 1
Availability Price Quantity
40
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 5
Multiples : 1
5 : USD 5.7
10 : USD 4.35
25 : USD 1.7625
129 : USD 1.0237
750 : USD 0.5012

501
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.162
10 : USD 0.7924
30 : USD 0.5768
82 : USD 0.5446
1000 : USD 0.5278

14474
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 19
Multiples : 1
19 : USD 0.7475
100 : USD 0.6396
500 : USD 0.5787
1000 : USD 0.4385
2000 : USD 0.4343
5000 : USD 0.43
10000 : USD 0.4258
25000 : USD 0.4215

48
Ship by Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.504

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Alternate Case Style
Application Code
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Gain Hfe Max
Current Ic @ Vce Sat
Current Ic Continuous A Max
Current Ic Hfe
Device Marking
Gain Bandwidth Ft Typ
Hfe Min
Hfe Typ
No. Of Transistors
Termination Type
Kind Of Package
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BD911 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BD911 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and 3 2 BD912 respectively. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD909 BD911 PNP BD910 BD912 Collector-Base Voltage (I = 0) 80 100 V V CBO E V Collector-Emitter Voltage (I = 0) 80 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I ,I Collector Current 15 A E C I Base Current 5 A B o P 90 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/6 October 1999BD909 / BD910 / BD911 / BD912 THERMAL DATA o R Thermal Resistance Junction-case Max 1.4 C/W thj-case o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BD909/910 V = 80 V 500 A CBO CB Current (I = 0) for BD911/912 V = 100 V 500 A E CB o T = 150 C case BD909/910 for V = 80 V 5 mA CB for BD911/912 V = 100 V 5 mA CB I Collector Cut-off for BD909/910 V = 40 V 1 mA CEO CE Current (I = 0) for BD911/912 V = 50 V 1 mA B CE I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C V * Collector-Emitter I = 100 mA for BD909/910 80 V CEO(sus) C Sustaining Voltage for BD911/912 100 V (I = 0) B V * Collector-Emitter I = 5 A I = 0.5 A 1 V CE(sat) C B Saturation Voltage I = 10 A I = 2.5 A 3 V C B V * Base-Emitter I = 10 A I = 2.5 A 2.5 V BE(sat) C B Saturation Voltage V * Base-Emitter Voltage I = 5 A V = 4 V 1.5 V BE C CE h * DC Current Gain I = 0.5 A V = 4 V 40 250 FE C CE I = 5 A V = 4 V 15 150 C CE I = 10 A V = 4 V 5 C CE f Transition frequency I = 0.5 A V = 4 V 3 MHz T C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area Derating Curves 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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