Product Information

BD912

BD912 electronic component of STMicroelectronics

Datasheet
Bipolar (BJT) Transistor PNP 100 V 15 A 3MHz 90 W Through Hole TO-220
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 4.775 ea
Line Total: USD 33.43

158 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 7  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
158 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 7
Multiples : 1

Stock Image

BD912
STMicroelectronics

7 : USD 4.775
100 : USD 1.35
150 : USD 1.1237
250 : USD 1.0863
500 : USD 0.9875
1000 : USD 0.775
2500 : USD 0.6875
10000 : USD 0.6625

10 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 50
Multiples : 50

Stock Image

BD912
STMicroelectronics

50 : USD 0.7605
200 : USD 0.7605
500 : USD 0.7605
1250 : USD 0.7605
2000 : USD 0.7605

3479 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 17
Multiples : 1

Stock Image

BD912
STMicroelectronics

17 : USD 0.7255
100 : USD 0.7184
250 : USD 0.6949
500 : USD 0.692
1000 : USD 0.6772
2000 : USD 0.6636

Read More Specifications

     
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Frequency
Power Dissipation
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Additional Infomation About Product

BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and 3 2 BD912 respectively. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD909 BD911 PNP BD910 BD912 Collector-Base Voltage (I = 0) 80 100 V V CBO E V Collector-Emitter Voltage (I = 0) 80 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I ,I Collector Current 15 A E C I Base Current 5 A B o P 90 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/6 October 1999BD909 / BD910 / BD911 / BD912 THERMAL DATA o R Thermal Resistance Junction-case Max 1.4 C/W thj-case o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BD909/910 V = 80 V 500 A CBO CB Current (I = 0) for BD911/912 V = 100 V 500 A E CB o T = 150 C case BD909/910 for V = 80 V 5 mA CB for BD911/912 V = 100 V 5 mA CB I Collector Cut-off for BD909/910 V = 40 V 1 mA CEO CE Current (I = 0) for BD911/912 V = 50 V 1 mA B CE I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C V * Collector-Emitter I = 100 mA for BD909/910 80 V CEO(sus) C Sustaining Voltage for BD911/912 100 V (I = 0) B V * Collector-Emitter I = 5 A I = 0.5 A 1 V CE(sat) C B Saturation Voltage I = 10 A I = 2.5 A 3 V C B V * Base-Emitter I = 10 A I = 2.5 A 2.5 V BE(sat) C B Saturation Voltage V * Base-Emitter Voltage I = 5 A V = 4 V 1.5 V BE C CE h * DC Current Gain I = 0.5 A V = 4 V 40 250 FE C CE I = 5 A V = 4 V 15 150 C CE I = 10 A V = 4 V 5 C CE f Transition frequency I = 0.5 A V = 4 V 3 MHz T C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area Derating Curves 2/6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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