Product Information

BFX34

BFX34 electronic component of STMicroelectronics

Datasheet
BFX34 NPN TO39 SWITCHING TRANS T/HOL
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.4699 ea
Line Total: USD 4.47

38 - Global Stock
Ships to you by
Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
38 - WHS 1


Ships to you by Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

BFX34
STMicroelectronics

1 : USD 4.4699
10 : USD 2.235
25 : USD 2.0115
100 : USD 1.6762
500 : USD 1.5086

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Additional Infomation About Product

BFX34 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 120 V CBO E V Collector-Emitter Voltage (I = 0) 60 V CEO B V Emitter-Base Voltage (I = 0) 6 V EBO C I Collector Current 5 A C o P Total Dissipation at T 25 C 5 W tot case o 0.87 W T 25 C amb o Tstg Storage Temperature -65 to 200 C o T Max. Operating Junction Temperature 200 C j 1/4 August 2001 Obsolete Product(s) - Obsolete Product(s) BFX34 THERMAL DATA o R Thermal Resistance Junction-case Max 35 C/W thj-case o R Thermal Resistance Junction-amb Max 200 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 60 V 0.02 10 A CES CE Current (V = 0) BE I Emitter Cut-off Current V = 4 V 0.05 10 A EBO EB (I = 0) C * V Collector-base I = 5 mA 120 V (BR)CBO C Breakdown Voltage (IE = 0) * V Collector-Emitter I = 100 mA 60 V CEO(sus) C Sustaining Voltage (I = 0) B * V Emitter-base Voltage I = 1 mA 6 V EBO E (I = 0) C * V Collector-Emitter I = 5 A I = 0.5 A 0.4 1 V CE(sat) C B Saturation Voltage * V Base-Emitter I = 5 A I = 0.5 A 1.3 1.6 V BE(sat) C B Saturation Voltage * h DC Current Gain I = 1 A V = 2 V 100 FE C CE I = 1.5 A V = 0.6 V 75 C CE IC = 2 A VCE = 2 V 40 80 150 * f Transition Frequency I = 0.5 A V = 5 V 70 100 MHz T C CE f = 20 MHz C Emitter-base I = 0 V = 0.5 V 300 500 pF EBO C EB Capacitance f = 1 MHz CCBO Collector-base IE = 0 VCB = 10 V 40 100 pF Capacitance f = 1 MHz RESISTIVE LOAD t Turn-on Time I = 0.5 A V = 20 V 0.6 0.25 s on C CC t Turn-off Time I = -I = 0.5 A 0.6 1.2 s off B1 B2 * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 Obsolete Product(s) - Obsolete Product(s)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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