X-On Electronics has gained recognition as a prominent supplier of BFX34 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BFX34 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BFX34 STMicroelectronics

BFX34 electronic component of STMicroelectronics
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Part No.BFX34
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: BFX34 NPN TO39 SWITCHING TRANS T/HOL
Datasheet: BFX34 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.1948 ea
Line Total: USD 4.19 
Availability - 38
Ship by Fri. 20 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
38
Ship by Fri. 20 Dec
MOQ : 1
Multiples : 1
1 : USD 4.1948
10 : USD 2.0974
25 : USD 1.8877
100 : USD 1.5731
500 : USD 1.4157

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFX34 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFX34 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BFX34 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 120 V CBO E V Collector-Emitter Voltage (I = 0) 60 V CEO B V Emitter-Base Voltage (I = 0) 6 V EBO C I Collector Current 5 A C o P Total Dissipation at T 25 C 5 W tot case o 0.87 W T 25 C amb o Tstg Storage Temperature -65 to 200 C o T Max. Operating Junction Temperature 200 C j 1/4 August 2001 Obsolete Product(s) - Obsolete Product(s) BFX34 THERMAL DATA o R Thermal Resistance Junction-case Max 35 C/W thj-case o R Thermal Resistance Junction-amb Max 200 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 60 V 0.02 10 A CES CE Current (V = 0) BE I Emitter Cut-off Current V = 4 V 0.05 10 A EBO EB (I = 0) C * V Collector-base I = 5 mA 120 V (BR)CBO C Breakdown Voltage (IE = 0) * V Collector-Emitter I = 100 mA 60 V CEO(sus) C Sustaining Voltage (I = 0) B * V Emitter-base Voltage I = 1 mA 6 V EBO E (I = 0) C * V Collector-Emitter I = 5 A I = 0.5 A 0.4 1 V CE(sat) C B Saturation Voltage * V Base-Emitter I = 5 A I = 0.5 A 1.3 1.6 V BE(sat) C B Saturation Voltage * h DC Current Gain I = 1 A V = 2 V 100 FE C CE I = 1.5 A V = 0.6 V 75 C CE IC = 2 A VCE = 2 V 40 80 150 * f Transition Frequency I = 0.5 A V = 5 V 70 100 MHz T C CE f = 20 MHz C Emitter-base I = 0 V = 0.5 V 300 500 pF EBO C EB Capacitance f = 1 MHz CCBO Collector-base IE = 0 VCB = 10 V 40 100 pF Capacitance f = 1 MHz RESISTIVE LOAD t Turn-on Time I = 0.5 A V = 20 V 0.6 0.25 s on C CC t Turn-off Time I = -I = 0.5 A 0.6 1.2 s off B1 B2 * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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