BUL1102EFP STMicroelectronics

BUL1102E High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed TAB Applications Four lamp electronic ballast for: 3 3 2 2 1 120 V mains in push-pull configuration 1 277 V mains in half bridge current feed TO-220FP TO-220 configuration Description This is a high voltage fast switching NPN power Figure 1. Internal schematic diagram transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with C (2, TAB) planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the (1) transistor to withstand a high collector current B level during breakdown condition, without using the Transil protection usually necessary in typical converters for lamp ballast. (3) E Table 1. Device summary Order codes Marking Package Packaging BUL1102E BUL1102E TO-220 Tube BUL1102EFP BUL1102EFP TO-220FP Tube February 2012 Doc ID 7929 Rev 5 1/13 www.st.com 13 Absolute maximum ratings BUL1102E 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1100 V CES BE V Collector-emitter voltage (I = 0) 450 V CEO B V Emitter-base voltage (I = 0) 12 V EBO C I Collector current 4 A C I Collector peak current (t < 5 ms) 8 A CM P I Base current 2 A B I Base peak current (t < 5 ms) 4 A BM P BUL1102E total dissipation at T = 25C 70 C P W TOT BUL1102EFP total dissipation at T = 25 C 30 C BUL1102EFP insolation withstand voltage (RMS) from V 1500 V ISO all three leads to external heatsink T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit BUL1203E thermal resistance junction-case 1.8 C/W R thJC BUL1203EFP thermal resistance junction-case 4.2 C/W 2/13 Doc ID 7929 Rev 5