BUL1203E STMicroelectronics

BUL1203E Datasheet High voltage fast-switching NPN power transistor Features High voltage capability TAB Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 2 1 TO-220 Applications Electronic ballast for fluorescent lighting C(2, TAB) Switch mode power supplies Description B(1) The BUL1203E is manufactured using diffused collector in planar technology to enhance switching speeds and tight h range while maintaining a wide RBSOA. FE Thanks to his enhanced high voltage structure 1 (EHVS1) it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level E(3) SC06960 TAB during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Product status link BUL1203E Product summary Order code BUL1203E Marking BUL1203E Package TO-220 Packing Tube DS2301 - Rev 4 - April 2021 www.st.com For further information contact your local STMicroelectronics sales office.BUL1203E Electrical ratings 1 Electrical ratings T = 25 C unless otherwise specified. case Table 1. Electrical characteristics Symbol Parameter Value Unit V Collector-base voltage (I = 0 A) 1200 V CBO E V Collector-emitter voltage (V = 0 V) 1200 V CES BE V Collector-emitter voltage (I = 0 A) 550 V CEO B V Collector-base voltage (I = 0 A) 9 V EBO C I Collector current 5 A C I Collector peak current (t < 5 ms) 8 A CM P I Base current 2 A B I Base peak current (t < 5 ms) 4 A BM P P Total power dissipation at T = 25 C 100 W TOT C T Storage temperature range C stg -65 to 150 T Operating junction temperature range C J Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 1.25 C/W thJC R Thermal resistance, junction-to-ambient 62.5 C/W thJA DS2301 - Rev 4 page 2/13