BUL1203EFP STMicroelectronics

BUL1203EFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS 3 2 ELECTRONIC BALLASTS FOR 1 FLUORESCENT LIGHTING (277 V HALF BRIDGE AND 120 V PUSH-PULL TO-220FP TOPOLOGIES) DESCRIPTION The BUL1203EFP is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight h range while FE maintaining a wide RBSOA. INTERNAL SCHEMATIC DIAGRAM Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-BaseVoltage (I = 0) 1200 V CBO E V Collector-Emitter Voltage (V = 0) 1200 V CES BE V Collector-Emitter Voltage (I = 0) 550 V CEO B VEBO Emitter-Base Voltage (IC = 0) 9 V I Collector Current 5 A C ICM Collector Peak Current (tp < 5 ms) 8 A I Base Current 2 A B I Base Peak Current (t < 5 ms) 4 A BM p o P Total Dissipation at T = 25 C36 W tot c V Insulation Withstand Voltage (RMS) from All 1500 V isol Three Leads to Exernal Heatsink o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/7 November 2003 BUL1203EFP THERMAL DATA o R Thermal Resistance Junction-case Max 3.47 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 1200 V 100 A CES CE Current (V = 0) BE I Collector Cut-off V = 550 V 100 A CEO CE Current (I = 0) B V * Collector-Emitter I = 100 mA L = 25 mH 550 V CEO(sus) C Sustaining Voltage (I = 0) B V Emitter-Base Voltage I = 10 mA 9 V EBO E (I = 0) C V * Collector-Emitter I = 1 A I = 0.2 A 0.5 V CE(sat) C B Saturation Voltage IC = 2 A IB = 0.4 A 0.7 V I = 3 A I = 1 A 1.5 V C B V * Base-Emitter I = 2 A I = 0.4 A 1.5 V BE(sat) C B Saturation Voltage I = 3 A I = 1 A 1.5 V C B h * DC Current Gain I = 1 mA V = 5 V 10 FE C CE IC = 10 mA VCE = 5 V 10 I = 0.8 A V = 3 V 14 32 C CE I = 2 A V = 5 V 9 28 C CE RESISTIVE LOAD I = 2 A I = 0.4 A C B1 t Turn-on Time 0.5 s on IB2 = -0.8 A tp = 30 s t Storage Time 2.5 3.0 s s V = 150 V (see figure 2) CC t Fall Time 0.2 0.3 s f E Repetitive Avalanche L = 2 mH C = 1.8 nF 6mJ ar Energy V = 50 V V = -5 V CC BE (see figure 3) * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Derating Curve 2/7