BUL128 STMicroelectronics

BUL128 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 APPLICATIONS: 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220 DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds INTERNAL SCHEMATIC DIAGRAM while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 700 V CES BE V Collector-Emitter Voltage (I = 0) 400 V CEO B V Emitter-Base Voltage (I = 0) 9 V EBO C I Collector Current 4 A C I Collector Peak Current (t < 5 ms) 8 A CM p I Base Current 2 A B I Base Peak Current (t < 5 ms) 4 A BM p o P Total Dissipation at T = 25 C70 W tot c o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/7 November 2001 BUL128 THERMAL DATA o R Thermal Resistance Junction-Case Max 1.78 C/W thj-case o R Thermal Resistance Junction-Ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 700 V 100 A CES CE o Current (V = -1.5 V) V = 700 V T = 125 C 500 A BE CE j V Emitter-Base Voltage I = 10 mA 9 V EBO E (I = 0) C V * Collector-Emitter I = 100 mA L = 25 mH 400 V CEO(sus) C Sustaining Voltage (IB = 0) ICEO Collector Cut-Off VCE = 400 V 250 A Current (I = 0) B V * Collector-Emitter I = 0.5 A I = 0.1 A 0.7 V CE(sat) C B Saturation Voltage I = 1 A I = 0.2 A 1 V C B I = 2.5 A I = 0.5 A 1.5 V C B I = 4 A I = 1 A 0.5 V C B V * Base-Emitter I = 0.5 A I = 0.1 A 1.1 V BE(sat) C B Saturation Voltage I = 1 A I = 0.2 A 1.2 V C B I = 2.5 A I = 0.5 A 1.3 V C B h * DC Current Gain I = 10 mA V = 5 V 10 FE C CE I = 2 A V = 5 V C CE Group A 14 28 Group B 25 40 RESISTIVE LOAD V = 125 V I = 2 A CC C t Storage Time I = 0.4 A I = -0.4 A 1.5 3 s s B1 B2 t Fall Time T = 30 s (see fig.2) 0.2 0.4 s f p INDUCTIVE LOAD IC = 2 A IB1 = 0.4 A t Storage Time 0.6 1 s s V = -5 V R = 0 BE(off) BB t Fall Time V = 200 V (see fig.1) 0.1 0.2 s f clamp * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. 2/7