BUL128D/-B STMicroelectronics

BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n STMicroelectronics PREFERRED SALES Figure 1: Package TYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION n VERY HIGH SWITCHING SPEED n INTEGRATED ANTIPARALLEL 3 COLLECTOR- EMITTER DIODE 2 1 TO-220 APPLICATIONS n ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING Figure 2: Internal Schematic Diagram n FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1: Order Codes Part Number Marking Package Packaging BUL128D-B BUL128D-B TO-220 Tube Table 2: Absolute Maximum Ratings Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 700 V CES BE V Collector-Emitter Voltage (I = 0) 400 V CEO B Emitter-Base Voltage V V V EBO (BR)EBO o (I = 0, I = 2 A, t < 10 s, T = 150 C) C B p J I Collector Current 4A C I Collector Peak Current (t < 5ms) 8A CM p I Base Current 2A B I Base Peak Current (t < 5ms) 4A BM p Rev. 2 February 2005 1/8BUL128D-B Symbol Parameter Value Unit o P Total Dissipation at T = 25 C 70 W tot C T Storage Temperature -65 to 150 C stg T Max. Operating Junction Temperature 150 C J Table 3: Thermal Data o R Thermal Resistance Junction-Case Max 1.78 thj-case C/W Thermal Resistance Junction-Ambient Max 62.5 o R thj-amb C/W o Table 4: Electrical Characteristics (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off Current V = 700 V 100 A CES CE (V = 0 V) o 500 A BE V =700 V T = 125 C CE j I Collector Cut-off Current V = 400 V 250 A CEO CE (I = 0) B V Emitter-Base I = 10 mA 9 18 V (BR)EBO E Breakdown Voltage (I = 0 ) C V * Collector-Emitter I = 100 mA L = 25 mH 400 V CEO(sus) C Sustaining Voltage (I = 0 ) B V * Collector-Emitter I = 0.5 A I = 0.1 A 0.7 V CE(sat) C B Saturation Voltage 1 V I = 1 A I = 0.2 A C B 1.5 V I = 2.5 A I = 0.5 A C B 0.5 V I = 4 A I = 1 A C B V * Base-Emitter Saturation I = 0.5 A I = 0.1 A 1.1 V BE(sat) C B Voltage 1.2 V I = 1 A I = 0.2 A C B 1.3 V I = 2.5 A I = 0.5 A C B h * DC Current Gain I = 10 mA V = 5 V 10 FE C CE 12 32 I = 2 A V = 5 V C CE RESISTIVE LOAD V =200 V I = 2 A CC C t Storage Time 0.6 s I = 0.4 A V = -5 V s B1 BE(off) Fall Time 0.1 s t f R = 0 W L = 200 H BB (see figure 15) INDUCTIVE LOAD V =250 V I = 2 A CC C t Storage Time 2 2.9 s s I = 0.4 A I = -0.4 A B1 B2 Fall Time 0.2 s t Tp = 30 s (see figure 14) f * Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 % 2/8