BUL138 STMicroelectronics

BUL138 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED o 3 FULLY CHARACTERIZED AT 125 C 2 1 APPLICATIONS ELECTRONIC BALLASTS FOR TO-220 FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUL138 is manufactured using high voltage Multi Epitaxial Planar technology for high INTERNAL SCHEMATIC DIAGRAM switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE V Collector-Emitter Voltage (I = 0) 400 V CEO B V Emitter-Base Voltage (I = 0) 9 V EBO C I Collector Current 5 A C I Collector Peak Current (t < 5 ms) 10 A CM p I Base Current 2 A B I Base Peak Current (t < 5 ms) 4 A BM p o P Total Dissipation at T = 25 C80 W tot c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/6 June 2001 BUL138 THERMAL DATA o R Thermal Resistance Junction-case Max 1.56 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 800 V 100 A CES CE o Current (V = 0) V = 800 V T = 125 C 500 A BE CE j I Collector Cut-off V = 400 V 250 A CEO CE Current (I = 0) B V Collector-Emitter I = 100 mA L = 25 mH 400 V CEO(sus) C Sustaining Voltage V Emitter-Base Voltage I = 10 mA 9 V EBO E V * Collector-Emitter I = 1 A I = 0.2 A 0.5 V CE(sat) C B Saturation Voltage IC = 2 A IB = 0.4 A 0.7 V I = 3 A I = 0.6 A 1 V C B I = 4 A I = 1 A 1 V C B I = 5 A I = 1 A 0.7 V C B V * Base-Emitter I = 1 A I = 0.2 A 1.1 V BE(sat) C B Saturation Voltage I = 2 A I = 0.4 A 1.3 V C B I = 3 A I = 0.6 A 1.5 V C B h * DC Current Gain I = 2 A V = 5 V 8 40 FE C CE I = 10 mA V = 5 V 10 C CE RESISTIVE LOAD IC = 2 A IB1 = -IB2 = 0.4 A t Storage Time V = 250 V 2.4 3.5 s s CC INDUCTIVE LOAD I = 2 A I = 0.4 A C B1 t Storage Time 0.7 1.4 s s V = -5 V R = 0 BE(off) BB t Fall Time 50 100 ns f V = 250 V L = 200 H CL INDUCTIVE LOAD I = 2 A I = 0.4 A C B1 t Storage Time 1 s s V = -5V R = 0 BE(off) BB t Fall Time 75 ns f V = 250 V L = 200 H CL o T = 125 C j * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Areas Derating Curve 2/6