BULB128-1 STMicroelectronics

BULB128-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code Marking Shipment BULB128-1 BULB128 Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS 3 MINIMUM LOT-TO-LOT SPREAD FOR 2 1 RELIABLE OPERATION VERY HIGH SWITCHING SPEED 2 2 THROUGH HOLE I PAK (TO-262) POWER I PAK PACKAGE IN TUBE (SUFFIX-1 ) (TO-262) (Suffix-1 ) APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 700 V CES BE V Collector-Emitter Voltage (I = 0) 400 V CEO B V Emitter-Base Voltage (I = 0) 9 V EBO C I Collector Current 4 A C I Collector Peak Current (t < 5 ms) 8 A CM p I Base Current 2 A B I Base Peak Current (t < 5 ms) 4 A BM p o P Total Dissipation at T = 25 C70 W tot c o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/7 September 2003 Obsolete Product(s) - Obsolete Product(s)BULB128-1 THERMAL DATA o R Thermal Resistance Junction-Case Max 1.78 C/W thj-case o R Thermal Resistance Junction-Ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 700 V 100 A CES CE o Current (V = 0) V = 700 V T = 125 C 500 A BE CE C V Emitter-Base Voltage I = 10 mA 9 V EBO E (I = 0) C V * Collector-Emitter I = 100 mA L = 25 mH 400 V CEO(sus) C Sustaining Voltage (IB = 0) ICEO Collector Cut-Off VCE = 400 V 250 A Current (I = 0) B V * Collector-Emitter I = 0.5 A I = 0.1 A 0.7 V CE(sat) C B Saturation Voltage I = 1 A I = 0.2 A 1 V C B I = 2.5 A I = 0.5 A 1.5 V C B I = 4 A I = 1 A 0.5 V C B V * Base-Emitter I = 0.5 A I = 0.1 A 1.1 V BE(sat) C B Saturation Voltage I = 1 A I = 0.2 A 1.2 V C B I = 2.5 A I = 0.5 A 1.3 V C B h * DC Current Gain I = 10 mA V = 5 V 10 FE C CE I = 2 A V = 5 V 14 28 C CE RESISTIVE LOAD V = 125 V I = 2 A CC C t Storage Time I = 0.4 A I = -0.4 A 1.5 3 s s B1 B2 t Fall Time T = 30 s (see fig.2) 0.2 0.4 s f p INDUCTIVE LOAD I = 2 A I = 0.4 A C B1 t Storage Time 0.6 1 s s V = -5 V R = 0 BE(off) BB tf Fall Time V = 200 V (see fig.1) 0.1 0.2 s clamp * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/7 Obsolete Product(s) - Obsolete Product(s)