D45H11FP STMicroelectronics

D44H11FP D45H11FP Complementary power transistors . Features Low collector-emitter saturation voltage Fast switching speed Applications Power amplifier 3 2 1 Switching circuits TO-220FP Description These low voltage transistors are housed in fully isolated TO-220FP packages and form a Figure 1. Internal schematic diagram complementary pair. They are manufactured in multi epitaxial planar technology for general purpose in linear and switching applications. Table 1. Device summary Order codes Marking Polarity Package Packaging D44H11FP D44H11FP NPN TO-220FP Tube D45H11FP D45H11FP PNP TO-220FP Tube March 2011 Doc ID 16096 Rev 3 1/9 www.st.com 9 Absolute maximum ratings D44H11FP, D45H11FP 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (I = 0) 80 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 10 A C I Collector peak current 20 A CM P Total dissipation at T = 25 C 36 W TOT case T Storage temperature -55 to 150 C STG T Max. operating junction temperature 150 C J Note: For PNP types voltage and current values are negative. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 3.5 C/W thJC R Thermal resistance junction-ambient max 62.5 C/W thJA 2/9 Doc ID 16096 Rev 3