D45H5 STMicroelectronics

D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors . Features Low collector-emitter saturation voltage TAB Fast switching speed Applications Power amplifier 3 2 Switching circuits 1 TO-220 Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general purpose linear and switching applications. Table 1. Device summary Order codes Marking Polarity Package Packaging D44H8 D44H8 NPN TO-220 Tube D44H11 D44H11 NPN TO-220 Tube D45H8 D45H8 PNP TO-220 Tube D45H11 D45H11 PNP TO-220 Tube October 2009 Doc ID 4213 Rev 5 1/8 www.st.com 8 Absolute maximum ratings D44H8, D44H11, D45H8, D45H11 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit Collector-emitter voltage (I = 0) D44H8 - D45H8 60 V B V CEO Collector-emitter voltage (I = 0) D44H11 - D45H11 80 V B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 10 A C I Collector peak current 20 A CM P Total dissipation at T = 25 C 50 W TOT case T Storage temperature -55 to 150 C STG T Max. operating junction temperature 150 C J Note: For PNP types voltage and current values are negative. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 2.5 C/W thJC R Thermal resistance junction-ambient max 62.5 C/W thJA 2/8 Doc ID 4213 Rev 5