MD2009DFP STMicroelectronics

MD2009DFP High voltage NPN power transistor for CRT TV Features State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement 3 Tight h range at operating collector current FE 2 1 Fully isolated power package UL compliant TO-220FP Integrated free wheeling diode Application Horizontal deflection output for CRT TV Figure 1. Internal schematic diagram Description The MD2009DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD R =60 typ. product series show improved silicon efficiency BE bringing updated performance to the horizontal deflection stage. Table 1. Device summary Order code Marking Package Packaging MD2009DFP MD2009DFP TO-220FP Tube August 2009 Doc ID 16108 Rev 1 1/10 www.st.com 10Electrical ratings MD2009DFP 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1500 V CES BE V Collector-emitter voltage (I = 0) 700 V CEO B V Base-emitter voltage (I = 0) 7 V EBO C I Collector current 10 A C I Collector peak current (t < 5ms) 16 A CM P I Base current 6 A B P Total dissipation at T = 25C 40 W TOT c Isolation withstand voltage (RMS) from all three V 2500 V ISO leads to external heatsink T Storage temperature stg -65 to 150 C 150 T Max. operating junction temperature J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 3.12 C/W thj-case 2/10 Doc ID 16108 Rev 1