MD2310FX STMicroelectronics

MD2310FX High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement 3 2 Tight h range at operating collector current FE 1 Fully insulated power package U.L. compliant TO-3PF Application Horizontal deflection output for monitor and Figure 1. Internal schematic diagram real flat TV Description The MD2310FX is manufactured using planar technology with diffused collector adopting new and enhanced high voltage structure. The MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage. Table 1. Device summary Order code Marking Package Packing MD2310FX MD2310FX TO-3PF Tube October 2009 Doc ID 11801 Rev 5 1/10 www.st.com 10Electrical ratings MD2310FX 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1500 V CES BE V Collector-emitter voltage (I = 0) 700 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 14 A C I Collector peak current (t < 5 ms) 21 A CM P I Base current 7 A B P Total dissipation at T = 25 C 62 W TOT c Insulation withstand voltage (RMS) from all three leads to external V 2500 V INS heatsink T Storage temperature -65 to 150 STG C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 2 C/W thJC 2/10 Doc ID 11801 Rev 5