X-On Electronics has gained recognition as a prominent supplier of MD2310FX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MD2310FX Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MD2310FX STMicroelectronics

MD2310FX electronic component of STMicroelectronics
MD2310FX STMicroelectronics
MD2310FX Bipolar Transistors - BJT
MD2310FX  Semiconductors

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See Product Specifications
Part No. MD2310FX
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT HI VLT NPN PWR TRANS STANDARD DEF
Datasheet: MD2310FX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6: USD 1.2434 ea
Line Total: USD 7.46 
Availability - 0
MOQ: 6  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 1.2434
600 : USD 1.2024
1200 : USD 1.193
2700 : USD 1.1692
5100 : USD 1.1692
10200 : USD 1.1692

0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 2.6941

0
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 1
Multiples : 1
1 : USD 1.1553
10 : USD 0.9696
30 : USD 0.8778
100 : USD 0.786
500 : USD 0.7315
1000 : USD 0.7035
2000 : USD 0.6939
4000 : USD 0.6901

0
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 6.8756
10 : USD 2.4679
25 : USD 2.332
100 : USD 1.9868
600 : USD 1.6208
1200 : USD 1.4012

0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 6
Multiples : 1
6 : USD 1.2434
600 : USD 1.2024
1200 : USD 1.193
2700 : USD 1.1692

0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 6
Multiples : 6
6 : USD 1.565
10 : USD 1.2107
100 : USD 1.0571
250 : USD 0.9792
500 : USD 0.9597

0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 6
Multiples : 6
6 : USD 1.7302
10 : USD 1.6117
25 : USD 1.3795
100 : USD 1.1603
250 : USD 1.0727
500 : USD 1.0632
1000 : USD 1.0419

0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 6
Multiples : 1
6 : USD 1.2636

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the MD2310FX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MD2310FX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MD2310FX High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement 3 2 Tight h range at operating collector current FE 1 Fully insulated power package U.L. compliant TO-3PF Application Horizontal deflection output for monitor and Figure 1. Internal schematic diagram real flat TV Description The MD2310FX is manufactured using planar technology with diffused collector adopting new and enhanced high voltage structure. The MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage. Table 1. Device summary Order code Marking Package Packing MD2310FX MD2310FX TO-3PF Tube October 2009 Doc ID 11801 Rev 5 1/10 www.st.com 10Electrical ratings MD2310FX 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1500 V CES BE V Collector-emitter voltage (I = 0) 700 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 14 A C I Collector peak current (t < 5 ms) 21 A CM P I Base current 7 A B P Total dissipation at T = 25 C 62 W TOT c Insulation withstand voltage (RMS) from all three leads to external V 2500 V INS heatsink T Storage temperature -65 to 150 STG C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 2 C/W thJC 2/10 Doc ID 11801 Rev 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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