MJ2955 STMicroelectronics

2N3055, MJ2955 Complementary power transistors Datasheet - production data Features TAB Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 1 Audio amplifier 2 Description TO-3 The devices are manufactured in planar technology with base island layout and are Figure 1. Internal schematic diagram suitable for audio, power linear and switching applications. Table 1. Device summary Order code Marking Package Packaging 2N3055 2N3055 TO-3 Tray MJ2955 MJ2955 November 2013 DocID4079 Rev 8 1/7 This is information on a product in full production. www.st.com Obsolete Product(s) - Obsolete Product(s)Absolute maximum rating 2N3055, MJ2955 1 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 Unit PNP MJ2955 V Collector-base voltage (I = 0) 100 V CBO E V Collector-emitter voltage (R = 100 ) 70V CER BE V Collector-emitter voltage (I = 0) 60 V CEO B V Emitter-base voltage (I = 0) 7 V EBO C I Collector current 15 A C I Base current 7 A B P Total dissipation at T 25C 115 W TOT c Storage temperature -65 to 200 C Tstg Max. operating junction temperature 200 C TJ Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.5 C/W thj-case Note: For PNP type voltage and current values are negative 2/7 DocID4079 Rev 8 Obsolete Product(s) - Obsolete Product(s)