X-On Electronics has gained recognition as a prominent supplier of MJD2955T4 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD2955T4 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD2955T4 STMicroelectronics

MJD2955T4 electronic component of STMicroelectronics
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Part No.MJD2955T4
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Gen Pur Switch
Datasheet: MJD2955T4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.3802 ea
Line Total: USD 950.5 
Availability - 0
MOQ: 2500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 1
2500 : USD 0.3802

   
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RoHS - XON
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We are delighted to provide the MJD2955T4 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD2955T4 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIXT4 ) ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS 1 GENERAL PURPOSE SWITCHING AND AMPLIFIER DPAK DESCRIPTION TO-252 The MJD2955 and MJD3055 form (SuffixT4 ) complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJD3055 PNP MJD2955 V Collector-Base Voltage (I = 0) 70 V CBO E V Collector-Emitter Voltage (I = 0) 60 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 10 A C I Base Current 6 A B o Ptot Total Dissipation at Tc = 25 C20W o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP type voltage and current values are negative. 1/6 February 2002 MJD2955 / MJD3055 THERMAL DATA o R Thermal Resistance Junction-case Max 6.25 C/W thj-case o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 70 V 20 A CEX CE o Current (V = -1.5 V) V = 70 V T = 150 C 2 mA BE CE j I Collector Cut-off V = 70 V 20 A CBO CB o Current (I = 0) V = 70 V T = 150 C 2 mA E CB j I Collector Cut-off V = 30 V 50 A CEO CE Current (I = 0) B I Emitter Cut-off Current V = 5 V 0.5 mA EBO EB (I = 0) C V * Collector-Emitter I = 30 mA 60 V CEO(sus) C Sustaining Voltage (I = 0) B VCE(sat)* Collector-Emitter IC = 4 A IB = 0.4 A 1.1 V Saturation Voltage I = 10 A I = 3.3 A 8 V C B V * Base-Emitter Voltage I = 4 A V = 4 V 1.8 V BE(on) C CE h * DC Current Gain I = 4 A V = 4 V 20 100 FE C CE I = 10 A V = 4 V 5 C CE f Transition Frequency I = 0.5 A V = 10 V f = 500 KHz 2 MHz T C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP type voltage and current values are negative. Safe Operating Area Derating Curves 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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