MJD31CT4-A STMicroelectronics

MJD31CT4-A Low voltage NPN power transistor Datasheet production data Features This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel 3 Complementary to the PNP type MJD32C 1 Application DPAK General purpose linear and switching TO-252 equipment Description Figure 1. Internal schematic diagram The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging MJD31CT4-A MJD31C DPAK Tape and reel June 2012 Doc ID 13473 Rev 4 1/13 This is information on a product in full production. www.st.com 13Electrical ratings MJD31CT4-A 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 100 V CBO E V Collector-emitter voltage (I = 0) 100 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 3 A C I Collector peak current 5 A CM I Base current 1 A B P Total dissipation at T = 25 C 15 W TOT c T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 8.3 C/W thJC (1) R Thermal resistance junction-pcb max 50 C/W thJPCB 1. When mounted on FR-4 board of 1 inch, 2 oz Cu. 2/13 Doc ID 13473 Rev 4