MJD361T4-A STMicroelectronics

MJD360T4-A MJD361T4-A Low voltage complementary power transistors Preliminary data Features Those devices are qualified for automotive application TAB Low collector emitter saturation voltage Surface-mounting TO-252 power package in tape and reel 3 1 Applications DPAK General purpose switching and amplifier TO-252 transistor Description Figure 1. Internal schematic diagrams The devices are manufactured in planar technology with base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Polarity Package Packaging MJD360T4-A MJD360 NPN DPAK Tape and reel MJD361T4-A MJD361 PNP August 2009 Doc ID 16126 Rev 1 1/7 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 7 change without notice.Electrical ratings MJD360T4-A, MJD361T4-A 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 60 V CBO E V Collector-emitter voltage (I = 0) 60 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 3 A C I Collector peak current 5 A CM I Base current 1 A B P Total dissipation at T = 25 C 15 W TOT c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Note: For PNP types voltage and current values are negative. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max. 8.3 C/W thj-case 2/7 Doc ID 16126 Rev 1