X-On Electronics has gained recognition as a prominent supplier of MJE340 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJE340 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJE340 STMicroelectronics

MJE340 electronic component of STMicroelectronics
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Part No.MJE340
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Medium Power
Datasheet: MJE340 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
162: USD 0.2002 ea
Line Total: USD 32.43 
Availability - 6997
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 162  Multiples: 1
Pack Size: 1
Availability Price Quantity
19572
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.3144
4000 : USD 0.3112
10000 : USD 0.3028

6997
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 162
Multiples : 1
162 : USD 0.2002
200 : USD 0.2002
750 : USD 0.2002
2000 : USD 0.2002
7500 : USD 0.2002

708
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3452
10 : USD 0.3353
30 : USD 0.3294
100 : USD 0.3234

1006
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.84
10 : USD 0.7476
45 : USD 0.3822
123 : USD 0.3612
5000 : USD 0.3584

8745
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 28
Multiples : 1
28 : USD 0.4513
100 : USD 0.3973
500 : USD 0.3458
1000 : USD 0.3394
2000 : USD 0.2824
4000 : USD 0.2803
10000 : USD 0.2223

19400
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.3144
4000 : USD 0.3112
10000 : USD 0.3028

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Category
Brand Category
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We are delighted to provide the MJE340 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJE340 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred salestypes Complementary NPN - PNP devices Applications Linear and switching industrial equipment Description SOT-32 The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complementary PNP type is MJE350. Figure 1. Internal schematic diagram 3 % Table 1. Device summary Order code Marking Polarity Package Packaging MJE340 MJE340 NPN SOT-32 Tube MJE350 MJE350 PNP SOT-32 Tube November 2011 Doc ID 4171 Rev 6 1/8 www.st.com 8Electrical ratings MJE340, MJE350 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter MJE340 (NPN) Unit MJE350 (PNP) V Collector-base voltage (I = 0) 300 V CBO E V Collector-emitter voltage (I = 0) 300 V CEO B V Base-emitter voltage (I = 0) 3 V EBO C I Collector current 0.5 A C P Total dissipation at T 25 C 20.8 W TOT c T Storage temperature -65 to 150 stg C T Max operating junction temperature 150 J Note: for PNP type voltage and current values are negative. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 6.0 C/W thJC 2/8 Doc ID 4171 Rev 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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