ST13003DN STMicroelectronics

ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode 3 Application 2 1 Compact fluorescent lamps (CFLs) SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching Figure 1. Internal schematic diagram speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Order code Marking Package Packaging ST13003DN 13003DN SOT-32BAG February 2010 Doc ID 17186 Rev 1 1/8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 8 change without notice. Obsolete Product(s) - Obsolete Product(s) Electrical ratings ST13003DN 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Collector-base voltage (I = 0) 9 V EBO C I Collector current 1 A C I Collector peak current (t < 5 ms) 2 A CM P I Base current 0.5 A B I Base peak current (t < 5 ms) 1 A BM P P Total dissipation at T = 25 C 20 W TOT c T Storage temperature -55 to 150 STG C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 6.25 C/W thJC 2/8 Doc ID 17186 Rev 1 Obsolete Product(s) - Obsolete Product(s)