X-On Electronics has gained recognition as a prominent supplier of STC03DE170HV Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. STC03DE170HV Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

STC03DE170HV STMicroelectronics

STC03DE170HV electronic component of STMicroelectronics
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Part No.STC03DE170HV
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Hybrid emiter switch bipolar transistor
Datasheet: STC03DE170HV Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.0535 ea
Line Total: USD 5.05 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 5.0535
10 : USD 4.7544

   
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We are delighted to provide the STC03DE170HV from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STC03DE170HV and other electronic components in the Bipolar Transistors - BJT category and beyond.

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AN1889 Application note ESBT STC03DE170HV in 3-phase auxiliary power supply Introduction The need to choose a high value of the fly-back voltage is well known to power supply designers when efficiency and high duty cycle become important requirements. Three- phase auxiliary power supplies, starting from a bulk voltage of 750 V, require theoretically power transistors with a block voltage capability higher than 1200 V. Practical considerations linked to better efficiency and safe margin may impose to choose devices with even higher breakdown voltage (i.e. 1500 V, 1700 V). Looking at the power switches currently available, while power bipolar transistors are strongly limited in switching frequency operation, Power MOSFETs show a much lower current capability, which may limit their use to low power applications. Recently available in the market, the ESBTs (Emitter Switched Bipolar Transistors) represent a valuable and cost effective alternative for all those applications where high voltage and high switching frequencies are a must. This application note describes the realization of a 50 W 3-phase auxiliary power supply by using the STC03DE170HV as main switch for the fly-back converter. Particular attention has been given to the transformer design as well as to the ESBT driving circuit requirements. August 2007 Rev 3 1/33 www.st.comContents AN1889 Contents 1 ESBT: theory and evolution . 4 2 Application description 7 2.1 Pre-design requisite 8 2.2 Fly-back transformer design . 11 3 Output circuit 14 4 Clamping circuit . 15 5 ESBT driving circuit 16 6 Current transformer core selection 19 7 PWM driver 22 7.1 Primary side regulation 22 7.2 Control loop compensation 22 7.3 Switching frequency and max duty cycle setting . 22 7.4 Current sensing and limiting . 22 7.5 ESBT gate drive 23 8 Start-up network . 24 9 Experimental results 25 10 PCB layout and list of materials 30 11 Revision history . 32 2/33

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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