STI13005-1 STMicroelectronics

STI13005-1 High voltage fast-switching NPN power transistor Preliminary data Features STI13005-1 is opposite pin out versus standard IPAK package High voltage capability Low spread of dynamic parameters 3 Very high switching speed 2 1 Application IPAK Switch mode power supplies (AC-DC converters) Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Order code Marking Package Packaging STI13005-1 I13005 IPAK Tube February 2010 Doc ID 17147 Rev 1 1/10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 10 change without notice.Electrical ratings STI13005-1 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0 I = 1.5 A t < 10 ms) V V EBO C B p (BR)EBO I Collector current 3 A C I Collector peak current (t < 5 ms) 6 A CM P I Base current 1.5 A B I Base peak current (t < 5 ms) 3 A BM P P Total dissipation at T = 25 C 30 W TOT c T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 4.2 C/W thJC 2/10 Doc ID 17147 Rev 1