STI18N65M2 STMicroelectronics

STI18N65M2, STP18N65M2 N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features Order code V R max I DS DS(on) D TAB TAB STI18N65M2 650V 0.33 12 A STP18N65M2 3 3 2 2 1 1 Extremely low gate charge 2 I PAK TO-220 Excellent output capacitance (C ) profile oss 100% avalanche tested Zener-protected Applications Figure 1. Internal schematic diagram , TAB Switching applications LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking Package Packaging 2 STI18N65M2 I PAK 18N65M2 Tube STP18N65M2 TO-220 January 2015 DocID026870 Rev 2 1/15 This is information on a product in full production. www.st.comContents STI18N65M2, STP18N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 14 2/15 DocID026870 Rev 2