STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in DPAK, IPAK, TO-220 and TO-247 Datasheet - production data Features Order code V T R max. I DS Jmax DS(on) D STB28N60M2 STI28N60M2 650 V 0.150 22 A STP28N60M2 STW28N60M2 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications (2 ) Switching applications D TAB LCC converters, resonant converters Description These devices are N-channel Power MOSFETs ( 1 ) G developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. S ( 3 ) AM15572V1 Table 1: Device summary Order code Marking Package Packing STB28N60M2 DPAK Tape and reel STI28N60M2 IPAK 28N60M2 STP28N60M2 TO-220 Tube STW28N60M2 TO-247 March 2017 DocID025254 Rev 4 1/21 www.st.com This is information on a product in full production. Contents STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 DPAK package information ............................................................ 10 4.2 DPAK packing information ............................................................. 13 4.3 IPAK package information ............................................................. 15 4.4 TO-220 type A package information ................................................ 16 4.5 TO-247 package information ........................................................... 18 5 Revision history ............................................................................ 20 2/21 DocID025254 Rev 4