STN0214 STMicroelectronics

STN0214 Very high voltage NPN power transistor Features High gain Very high voltage capability 4 Applications 3 2 1 Haptic High voltage solenoid driving SOT-223 Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage Figure 1. Internal schematic diagram diffused collector technology. Table 1. Device summary Order code Marking Package Packaging STN0214 N0214 SOT-223 Tape and reel February 2012 Doc ID 022769 Rev 1 1/7 www.st.com 7 Electrical ratings STN0214 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1400 V CES BE V Collector-emitter voltage (I = 0) 1200 V CEO B V Emitter-base voltage (I = 0) 6 V EBO C I Collector current 200 mA C I Collector peak current (t < 5 ms) 400 mA CM P I Base current 100 mA B I Base peak current (t < 1 ms) 200 mA BM P P Total dissipation at T = 25 C 1.6 W TOT amb T Storage temperature -65 to 150 stg C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-ambient 78 C/W thj-amb 2 1. When mounted on PCB area of 1 cm , t < 10 sec 2/7 Doc ID 022769 Rev 1