X-On Electronics has gained recognition as a prominent supplier of STN0214 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. STN0214 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

STN0214 STMicroelectronics

STN0214 electronic component of STMicroelectronics
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See Product Specifications
Part No.STN0214
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT Very High Volt NPN 1400V 200mA PWR Tran
Datasheet: STN0214 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.5596 ea
Line Total: USD 1119.2

Availability - 0
MOQ: 2000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 2000
Multiples : 1000
2000 : USD 0.539
10000 : USD 0.5156

0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 1.3989

0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 2.3361
10 : USD 2.0221
100 : USD 1.5762
500 : USD 1.302

0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 2.3361
10 : USD 2.0221
100 : USD 1.5762
500 : USD 1.302

0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1000
Multiples : 1000
1000 : USD 1.1732

0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 2.5711
10 : USD 2.0618
100 : USD 1.7238
500 : USD 1.56
1000 : USD 1.4137

0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1000
Multiples : 1000
1000 : USD 0.5602
2000 : USD 0.5188
3000 : USD 0.5188
5000 : USD 0.5188
10000 : USD 0.5188

0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 2000
Multiples : 2000
2000 : USD 0.5566

0
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 2.698
10 : USD 1.015
25 : USD 0.9242
100 : USD 0.7597

0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 2000
Multiples : 1000
2000 : USD 0.6333

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the STN0214 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STN0214 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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STN0214 Very high voltage NPN power transistor Features High gain Very high voltage capability 4 Applications 3 2 1 Haptic High voltage solenoid driving SOT-223 Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage Figure 1. Internal schematic diagram diffused collector technology. Table 1. Device summary Order code Marking Package Packaging STN0214 N0214 SOT-223 Tape and reel February 2012 Doc ID 022769 Rev 1 1/7 www.st.com 7 Electrical ratings STN0214 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1400 V CES BE V Collector-emitter voltage (I = 0) 1200 V CEO B V Emitter-base voltage (I = 0) 6 V EBO C I Collector current 200 mA C I Collector peak current (t < 5 ms) 400 mA CM P I Base current 100 mA B I Base peak current (t < 1 ms) 200 mA BM P P Total dissipation at T = 25 C 1.6 W TOT amb T Storage temperature -65 to 150 stg C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-ambient 78 C/W thj-amb 2 1. When mounted on PCB area of 1 cm , t < 10 sec 2/7 Doc ID 022769 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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