STN851 STMicroelectronics

STN851 Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic 4 Fast-switching speed 3 2 1 Applications Emergency lighting SOT-223 Voltage regulators Relay drivers High efficiency low voltage switching applications Figure 1. Internal schematic diagram Description The device is manufactured in Planar Technology withBase Islan layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging STN851 N851 SOT-223 Tape and reel March 2009 Rev 7 1/10 www.st.com 10Electrical ratings STN851 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 150 V CBO E V Collector-emitter voltage (I = 0) 60 V CEO B V 7 Emitter-base voltage (I = 0) V EBO C I Collector current 5 A C I Collector peak current (t < 5 ms) 10 A CM P I Base current 1 A B I Base peak current (t < 5 ms) 2 A BM P P Total dissipation at T = 25 C 1.6 W tot amb T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-ambient 78 C/W thj-amb 2 1. Device mounted on a p.c.b. area of 1 cm 2/10