X-On Electronics has gained recognition as a prominent supplier of STN851 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. STN851 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

STN851 STMicroelectronics

STN851 electronic component of STMicroelectronics
STN851 STMicroelectronics
STN851 Bipolar Transistors - BJT
STN851  Semiconductors

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See Product Specifications
Part No. STN851
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN Lo-Volt Fast Sw
Datasheet: STN851 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.4663 ea
Line Total: USD 466.3 
Availability - 2910
Ship by Tue. 22 Apr to Mon. 28 Apr
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
8730
Ship by Tue. 22 Apr to Mon. 28 Apr
MOQ : 2000
Multiples : 1000
2000 : USD 0.3975
3000 : USD 0.3523

2871
Ship by Tue. 29 Apr to Fri. 02 May
MOQ : 5
Multiples : 5
5 : USD 0.5575
50 : USD 0.4059
150 : USD 0.3329
1000 : USD 0.3085
2000 : USD 0.289
5000 : USD 0.2793

76
Ship by Fri. 18 Apr to Tue. 22 Apr
MOQ : 1
Multiples : 1
1 : USD 1.526
10 : USD 1.0402
50 : USD 0.8372
60 : USD 0.315
100 : USD 0.3136

8730
Ship by Tue. 22 Apr to Mon. 28 Apr
MOQ : 2000
Multiples : 1000
2000 : USD 0.3975
3000 : USD 0.3523

2910
Ship by Tue. 22 Apr to Mon. 28 Apr
MOQ : 1000
Multiples : 1000
1000 : USD 0.4663
2000 : USD 0.4194
3000 : USD 0.3075
5000 : USD 0.2092
7000 : USD 0.1613
10000 : USD 0.143

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the STN851 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STN851 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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STN851 Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic 4 Fast-switching speed 3 2 1 Applications Emergency lighting SOT-223 Voltage regulators Relay drivers High efficiency low voltage switching applications Figure 1. Internal schematic diagram Description The device is manufactured in Planar Technology withBase Islan layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging STN851 N851 SOT-223 Tape and reel March 2009 Rev 7 1/10 www.st.com 10Electrical ratings STN851 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 150 V CBO E V Collector-emitter voltage (I = 0) 60 V CEO B V 7 Emitter-base voltage (I = 0) V EBO C I Collector current 5 A C I Collector peak current (t < 5 ms) 10 A CM P I Base current 1 A B I Base peak current (t < 5 ms) 2 A BM P P Total dissipation at T = 25 C 1.6 W tot amb T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-ambient 78 C/W thj-amb 2 1. Device mounted on a p.c.b. area of 1 cm 2/10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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