STO33N60M6 Datasheet N-channel 600 V, 105 m typ., 25 A, MDmesh M6 Power MOSFET in a TOLL package Features V R max. I Order code DS DS(on) D STO33N60M6 600 V 125 m 25 A Reduced switching losses Lower R per area vs previous generation DS(on) Low gate input resistance TO-LL type A 100% avalanche tested Zener-protected Drain (TAB) Excellent switching performance thanks to the extra driving source pin Applications Gate(1) Switching applications LLC converters Driver Power source (2) source (3, 4, 5, 6, 7,8) Boost PFC converters N-chG1DS2PS345678DTABZ Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with one of the DS(on) Product status link most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. STO33N60M6 Product summary Order code STO33N60M6 Marking 33N60M6 Package TO-LL type A Packing Tape and reel DS12688 - Rev 2 - May 2021 www.st.com For further information contact your local STMicroelectronics sales office.STO33N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 25 C I A D Drain current (continuous) at T = 100 C 15.8 C (1) I Drain current (pulsed) 78 A DM P Total power dissipation at T = 25 C 230 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 100 V/ns dv/dt T Storage temperature range C stg -55 to 150 T Operating junction temperature range C J 1. Pulse width limited by safe operating area. 2. I 25 A, di/dt 400 A/s, V (peak) < V , V = 400 V. SD DS (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.54 C/W thJC (1) Thermal resistance, junction-to-board 43 R C/W thJB (2) 22 Thermal resistance, junction-to-board 1. When mounted on 1 inch FR-4 pcb, standard footprint 2 Oz copper board. 2. When mounted on 40x40mm FR-4 pcb, 6 cm 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T max.) 4 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 500 mJ AS J D AR DD DS12688 - Rev 2 page 2/15