STWA50N65DM2AG STMicroelectronics

STWA50N65DM2AG Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmesh DM2 in TO-247 long leads package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STWA50N65DM2AG 650 V 0.087 38 A 300 W AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Figure 1: Internal schematic diagram Zener-protected D(2) Applications Switching applications Description G(1) This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. S(3) AM01476v1 No tab Table 1: Device summary Order code Marking Package Packing STWA50N65DM2AG 50N65DM2 TO-247 long leads Tube The HTRB test was performed at 80% V in compliance with AEC-Q101 rev. C. All the (BR)DSS other tests were performed according to rev. D. December 2017 DocID030213 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STWA50N65DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 long leads package information ........................................... 9 5 Revision history ............................................................................ 11 2/12 DocID030213 Rev 2