STO36N60M6 Datasheet N-channel 600 V, 85 m typ., 30 A, MDmesh M6 Power MOSFET in a TOLL package Features V R max. I Order code DS DS(on) D STO36N60M6 600 V 99 m 30 A Reduced switching losses Lower R per area vs previous generation DS(on) Low gate input resistance TO-LL type A 100% avalanche tested Zener-protected Drain (TAB) Excellent switching performance thanks to the extra driving source pin Applications Gate(1) Switching applications Driver Power source (2) source (3, 4, 5, 6, 7,8) Description N-chG1DS2PS345678DTABZ The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with one of the DS(on) most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STO36N60M6 Product summary Order code STO36N60M6 Marking 36N60M6 Package TO-LL type A Packing Tape and reel DS12120 - Rev 4 - May 2021 www.st.com For further information contact your local STMicroelectronics sales office.STO36N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 30 C I A D Drain current (continuous) at T = 100 C 19 C (1) I Drain current (pulsed) 102 A DM P Total power dissipation at T = 25 C 230 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 100 V/ns dv/dt T Storage temperature range C stg -55 to 150 T Operating junction temperature range C J 1. Pulse width limited by safe operating area. 2. I 30 A, di/dt 400 A/s, V (peak) < V , V = 400 V. SD DS (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.54 C/W thJC (1) Thermal resistance, junction-to-board 43 R C/W thJB (2) 22 Thermal resistance, junction-to-board 1. When mounted on 1 inch FR-4 pcb, standard footprint 2 Oz copper board. 2. When mounted on 40x40mm FR-4 pcb, 6 cm 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T max.) 5 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 750 mJ AS J D AR DD DS12120 - Rev 4 page 2/15