STPS3H100-Y Datasheet Automotive 3 A - 100 V power Schottky rectifier Features AEC-Q101 qualified revision C Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and forward voltage drop Avalanche capability specified ECOPACK2 compliant PPAP capable V guaranteed from -40 to +175 C RRM Applications DC/DC converter Reverse polarity protection Freewheeling diodes Switching diode Description This Schottky rectifier is packaged in SMB Flat designed for high frequency miniature Product status link switched mode power supplies such as adaptors and on board DC to DC converters for automotive applications. STPS3H100-Y Product summary I 3 A F(AV) V 100 V RRM T (max.) 175 C j V (typ.) 0.63 V F DS11461 - Rev 2 - January 2020 www.st.com For further information contact your local STMicroelectronics sales office.STPS3H100-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage, Tj = -40 C to +175 C 100 V RRM I T = 125 C Average forward current, = 0.5 square wave 3 A F(AV) l I t = 10 ms sinusoidal Surge non repetitive forward current 25 A FSM p t = 10 s, p P Repetitive peak avalanche power 170 W ARM T = 125 C j T Storage temperature range -65 to +175 C stg (1) T -40 to +175 C j Maximum operating junction temperature range 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Typ. value Unit R Junction to lead 15 C/W th(j-l) For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 1.00 A j (1) I Reverse leakage current T = 125 C V = V - 0.40 1.00 j R RRM R mA T = 150 C - 3.3 j T = 25 C - 0.84 j I = 3 A F T = 125 C - 0.63 0.68 j (2) V Forward voltage drop V F T = 25 C - 0.94 j I = 6 A F T = 125 C - 0.71 0.80 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.56 x I + 0.04 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS11461 - Rev 2 page 2/9