STT13005D STMicroelectronics

STT13005D High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting 3 SOT-32 Flyback and forward single transistor low power converters Figure 1. Internal schematic diagram Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1. Device summary Order codes Marking Package Packaging STT13005D T13005D SOT-32 Tube STT13005D-K T13005D SOT-32 Bag November 2009 Doc ID 14897 Rev 2 1/10 www.st.com 10Electrical ratings STT13005D 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 2 A C I Collector peak current (t < 5 ms) 4 A CM P I Base current 1 A B I Base peak current (t < 5 ms) 2 A BM P P Total dissipation at T = 25 C 45 W TOT c T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 2.8 C/W thJC 2/10 Doc ID 14897 Rev 2