X-On Electronics has gained recognition as a prominent supplier of STT13005D-K Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. STT13005D-K Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

STT13005D-K STMicroelectronics

STT13005D-K electronic component of STMicroelectronics
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See Product Specifications
Part No.STT13005D-K
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: STMicroelectronics Bipolar Transistors - BJT High Voltage NPN 700V VCES 400V VCEO
Datasheet: STT13005D-K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 1
2500 : USD 0.8188
25000 : USD 0.7677
250000 : USD 0.4806
1250000 : USD 0.3482
2500000 : USD 0.3474
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0485
10 : USD 0.9256
100 : USD 0.7205
500 : USD 0.5796
1000 : USD 0.4733
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.3532
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.7199
10 : USD 0.79
100 : USD 0.4449
1000 : USD 0.3742
2500 : USD 0.344
10000 : USD 0.344
25000 : USD 0.3314
50000 : USD 0.3263
100000 : USD 0.3188
N/A

Obsolete
0
MOQ : 85
Multiples : 1
85 : USD 0.7811
100 : USD 0.5252
1000 : USD 0.3981
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STT13005D-K from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STT13005D-K and other electronic components in the Bipolar Transistors - BJT category and beyond.

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STT13005D High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting 3 SOT-32 Flyback and forward single transistor low power converters Figure 1. Internal schematic diagram Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1. Device summary Order codes Marking Package Packaging STT13005D T13005D SOT-32 Tube STT13005D-K T13005D SOT-32 Bag November 2009 Doc ID 14897 Rev 2 1/10 www.st.com 10Electrical ratings STT13005D 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 2 A C I Collector peak current (t < 5 ms) 4 A CM P I Base current 1 A B I Base peak current (t < 5 ms) 2 A BM P P Total dissipation at T = 25 C 45 W TOT c T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 2.8 C/W thJC 2/10 Doc ID 14897 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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