X-On Electronics has gained recognition as a prominent supplier of STX13003-AP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. STX13003-AP Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

STX13003-AP STMicroelectronics

STX13003-AP electronic component of STMicroelectronics
STX13003-AP STMicroelectronics
STX13003-AP Bipolar Transistors - BJT
STX13003-AP  Semiconductors

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See Product Specifications
Part No. STX13003-AP
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: STMicroelectronics Bipolar Transistors - BJT HV FST SWCH PW TRNS
Datasheet: STX13003-AP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
39: USD 0.1601 ea
Line Total: USD 6.24 
Availability - 0
MOQ: 39  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 4000
Multiples : 2000
4000 : USD 0.2685
6000 : USD 0.2658
8000 : USD 0.2632
10000 : USD 0.2606
12000 : USD 0.2579
20000 : USD 0.2553
30000 : USD 0.2528
50000 : USD 0.2503
100000 : USD 0.2478

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1
1 : USD 1.2747
10 : USD 1.0558
100 : USD 0.7884
500 : USD 0.6194
1000 : USD 0.4787

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2000
Multiples : 2000
2000 : USD 0.482

0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.6294
10 : USD 0.7707
100 : USD 0.4182

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 39
Multiples : 1
39 : USD 0.1601
100 : USD 0.1512
250 : USD 0.1487
500 : USD 0.1457

   
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RoHS - XON
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Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
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Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
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We are delighted to provide the STX13003-AP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STX13003-AP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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STX13003 High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery charger Description TO-92 TO-92AP The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a Figure 1. Internal schematic diagram cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. (1) Table 1. Device summary Order codes Marking Package Packaging STX13003 X13003 TO-92 Bag STX13003G X13003G TO-92 Bag STX13003-AP X13003 TO-92AP Ammopack STX13003G-AP X13003G TO-92AP Ammopack 1. The letter in the order code suffix identifies the product as ECOPACK2 grade. Please see Section 3 for details. December 2010 Doc ID 7928 Rev 6 1/11 www.st.com 11Electrical ratings STX13003 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0, I = 0.5 A, t < 10 ms) V V EBO C B P (BR)EBO I Collector current 1 A C I Collector peak current (t < 5 ms) 3 A CM P I Base current 0.5 A B I Base peak current (t < 5 ms) 1.5 A BM P P Total dissipation at T = 25 C 1.5 W TOT c T Storage temperature -65 to 150 stg C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 83 C/W thJC 2/11 Doc ID 7928 Rev 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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