X-On Electronics has gained recognition as a prominent supplier of STX13003-AP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. STX13003-AP Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

STX13003-AP STMicroelectronics

STX13003-AP electronic component of STMicroelectronics
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Part No.STX13003-AP
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: STMicroelectronics Bipolar Transistors - BJT HV FST SWCH PW TRNS
Datasheet: STX13003-AP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
39: USD 0.1654 ea
Line Total: USD 6.45 
Availability - 0
MOQ: 39  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 4000
Multiples : 2000
4000 : USD 0.2773
6000 : USD 0.2746
8000 : USD 0.2718
10000 : USD 0.2691
12000 : USD 0.2664
20000 : USD 0.2637
30000 : USD 0.2611
50000 : USD 0.2586
100000 : USD 0.2559

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3164
10 : USD 1.0904
100 : USD 0.8142
500 : USD 0.6397
1000 : USD 0.4944

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.4978

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.6829
10 : USD 0.796
100 : USD 0.4319

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 39
Multiples : 1
39 : USD 0.1654
100 : USD 0.1562
250 : USD 0.1536
500 : USD 0.1505

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the STX13003-AP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STX13003-AP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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STX13003 High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery charger Description TO-92 TO-92AP The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a Figure 1. Internal schematic diagram cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. (1) Table 1. Device summary Order codes Marking Package Packaging STX13003 X13003 TO-92 Bag STX13003G X13003G TO-92 Bag STX13003-AP X13003 TO-92AP Ammopack STX13003G-AP X13003G TO-92AP Ammopack 1. The letter in the order code suffix identifies the product as ECOPACK2 grade. Please see Section 3 for details. December 2010 Doc ID 7928 Rev 6 1/11 www.st.com 11Electrical ratings STX13003 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0, I = 0.5 A, t < 10 ms) V V EBO C B P (BR)EBO I Collector current 1 A C I Collector peak current (t < 5 ms) 3 A CM P I Base current 0.5 A B I Base peak current (t < 5 ms) 1.5 A BM P P Total dissipation at T = 25 C 1.5 W TOT c T Storage temperature -65 to 150 stg C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 83 C/W thJC 2/11 Doc ID 7928 Rev 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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