T1235T-8FP 12 A Snubberless Triac Datasheet production data Features A2 Medium current Triac High static and dynamic commutation G A1 Three quadrants ECOPACK 2 compliant component Complies with UL standards (File ref: E81734) Applications G A2 General purpose AC line load switching A1 Motor control circuits TO-220FPAB Small home appliances (T1235T-8FP) Lighting Inrush current limiting circuits Overvoltage crowbar protection Table 1. Device summary Symbol Value Unit Description I 12 A Available in through-hole full pack package, the T(rms) T1235T-8FP Triac can be used for the on/off or V , V 800 V DRM RRM phase angle control function in general purpose V , V 900 V DSM RSM AC switching where high commutation capability is required. This device can be used without a I 35 mA GT snubber circuit when the limits defined in this datasheet are respected. Provides UL certified insulation rated at 2 kV. TM: Snubberless is a trademark of STMicroelectronics January 2015 DocID024261 Rev 3 1/9 This is information on a product in full production. www.st.com 9Characteristics T1235T-8FP 1 Characteristics Table 2. Absolute ratings (limiting values, T = 25 C unless otherwise stated) j Symbol Parameter Value Unit I On-state rms current (full sine wave) T = 99 C 12 A T(rms) c F = 50 Hz t = 20 ms 90 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 95 ItI t value for fusing, T initial = 25 C t = 10 ms 54 A s j p T = 150 C 600 j V , DRM Repetitive surge peak off-state voltage V V RRM T = 125 C 800 j V , DSM Non repetitive surge peak off-state voltage t = 10 ms 900 V p V RSM Critical rate of rise of on-state current dI/dt F = 100 Hz 100 A/s I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 150 j T Maximum lead temperature for soldering during 10 s 260 C L V Insulation rms voltage, 1 minute 2 kV ins Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrant Value Unit Min. 1.75 (1) I V = 12 V, R = 30 I - II - III mA GT D L Max. 35 V = 12 V, R = 30 V I - II - III Max. 1.3 V D L GT V V = V , R = 3.3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 500 mA Max. 40 mA H T I - III 60 I I = 1.2 I Max. mA L G GT II 65 V = 536 V, gate open T = 125 C 2000 V/s D j dV/dt Min. V = 402 V, gate open T = 150 C 1000 V/s D j T = 125 C 12 j (dI/dt)c Without snubber (dV/dt)c > 20 V/s) Min. A/ms T = 150 C 6 j 1. Minimum I is guaranteed at 5% of I max. GT GT 2. For both polarities of A2 referenced to A1 2/9 DocID024261 Rev 3