TIP35C STMicroelectronics

TIP35C TIP36C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging TIP35C TIP35C TO-247 Tube TIP36C TIP36C September 2008 Rev 5 1/9 www.st.com 9Electrical ratings TIP35C - TIP36C 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit NPN TIP35C PNP TIP36C V Collector-base voltage (I = 0) 100 V CBO E V Collector-emitter voltage (I = 0) 100 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 25 A C I Collector peak current (t < 5 ms) 50 A CM P I Base current 5 A B P Total dissipation at T = 25 C 125 W tot case T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J For PNP type voltage and current values are negative. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1 C/W thj-case 2/9