X-On Electronics has gained recognition as a prominent supplier of BC546B A1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC546B A1 Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC546B A1 Taiwan Semiconductor

BC546B A1 electronic component of Taiwan Semiconductor
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Part No.BC546B A1
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Taiwan Semiconductor Bipolar Transistors - BJT NPN Transistor
Datasheet: BC546B A1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.2575
10 : USD 0.2367
100 : USD 0.1047
500 : USD 0.063
1000 : USD 0.0428
4000 : USD 0.0328
8000 : USD 0.029
24000 : USD 0.0243
48000 : USD 0.0218
N/A

Obsolete
0
MOQ : 4000
Multiples : 4000
4000 : USD 0.0779
N/A

Obsolete
0
MOQ : 107
Multiples : 1
107 : USD 0.0634
250 : USD 0.0592
500 : USD 0.0576
1000 : USD 0.0564
N/A

Obsolete
   
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We are delighted to provide the BC546B A1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC546B A1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement V 30-80 V CBO High surge current capability V 30-65 V CEO Compliant to RoHS directive 2011/65/EU and V 6 V in accordance to WEEE 2002/96/EC EBO Halogen-free according to IEC 61249-2-21 I 100 mA C h 220-800 FE APPLICATIONS Package TO-92 Switching mode power supply (SMPS) Configuration Single Dice Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: TO-92 Molding compound meets UL 94 V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BC8xxA/B/C Marking code on the device (Note 1) Power dissipation P 500 D mW Notes: 1.x is device code from46 to50 ,MARKIN should follow thePART NO 1 Version:C1703 BC546A/B/C - BC550A/B/C Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BC546 80 Collector-base voltage, emitter open BC547,BC550 V 50 V CBO BC548,BC549 30 BC546 65 Collector-emitter voltage, base open BC547,BC550 V 45 V CEO BC548,BC549 30 BC546 6 Emitter-base voltage, collector open BC547,BC550 V 6 V EBO BC548,BC549 6 Collector current I 100 C mA Peak collector current I 200 mA CM T -65 to +150 Junction temperature J C T -65 to +150 Storage temperature C STG ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Collector cutoff current, emitter V = 30 V I - - 15 nA CB CBO open Emitter cutoff - - 100 current, V = 5 V I nA EB EBO collector open BC546 80 - - Collector-base BC547,BC550 V 50 - - voltage, I = 100 A CBO V C emitter open BC548,BC549 30 - - BC546 65 - - Collector- BC547,BC550 V 45 - - V emitter voltage, I = 10 mA CEO C base open BC548,BC549 30 - - BC546 6 - - Emitter-base BC547,BC550 V 6 - - V voltage, I = 100 A EBO E collector open BC548,BC549 6 - - Current gain group :A 110 - 220 DC current V = 5 V, CE B 200 - 450 h FE gain I = 2 mA C C 420 - 800 2 Version:C1703

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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