HS1B F3 Taiwan Semiconductor

HS1A thru HS1M Taiwan Semiconductor CREAT BY ART High Efficient Surface Mount Rectifiers FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - Fast switching for high efficiency - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 DO-214AC (SMA) Base P/N with suffix on packing code - Green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A HS HS HS HS HS HS HS HS PARAMETER SYMBOL UNIT 1A 1B 1D 1F 1G 1J 1K 1M Maximum repetitive peak reverse voltage V 50 100 200 300 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 210 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 300 400 600 800 1000 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.0 1.3 1.7 V F 1 A 5 Maximum reverse current rated VR T =25 J T =100 I 50 A J R T =125 150 J Maximum reverse recovery time (Note 2) Trr 50 75 ns Typical junction capacitance (Note 3) 20 15 Cj pF O Typical thermal resistance R 70 JA C/W O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 STG C Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS D1405050 Version: I14HS1A thru HS1M Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE R3 SMA 1,800 / 7 Plastic reel R2 SMA 7,500 / 13 Paper reel M2 SMA 7,500 / 13 Plastic reel Prefix F3 Folded SMA 1,800 / 7 Plastic reel HS1x Suffix (Note 1) F2 Folded SMA 7,500 / 13 Paper reel F4 Folded SMA 7,500 / 13 Plastic reel E3 Clip SMA 1,800 / 7 Plastic reel N/A E2 Clip SMA 7,500 / 13 Plastic reel Note 1: defines voltage from 50V (HS1A) to 1000V (HS1M) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PART NO. PACKING CODE DESCRIPTION QUALIFIED CODE HS1M R3 HS1M R3 HS1M R3G R3 G Green compound HS1M HS1MHR3 H R3 AEC-Q101 qualified HS1M RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM AVERAGE FORWARD CURRENT DERATING 1000 1.2 1 TJ=125 100 0.8 0.6 TJ=25 0.4 10 0.2 0 1 80 90 10 0 11 0 12 0 13 0 14 0 15 0 0 20 40 60 80 100 120 140 o LEAD TEMPERATURE ( C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 4- TYPICAL INSTANTANEOUS FORWARD FIG. 3- MAXIMUM NON-REPETITIVE FORWARD CHARACTERISTICS SURGE CURRENT 100 40 35 HS1A-HS1D 30 10 8.3ms Single Half Sine Wave 25 20 HS1G 1 15 10 5 HS1J-HS1M 0. 1 1 10 100 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 NUMBER OF CYCLES AT 60 Hz FORWARD VOLTAGE (V) Document Number: DS D1405050 Version: I14 AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE URRENT (A) INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT (A) (A)