S2MA R3G Taiwan Semiconductor

CREAT BY ART S2AA - S2MA 1.5AMPS Surface Mount Rectifiers SMA/DO-214AC Features For surface mounted application Glass passivated junction chip Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260 High temperature soldering: 260/10 seconds at terminals Green compound with suffix on packing code & prefix on datecode Mechanical Data Case: Molded plastic Terminal: Pure tin plated, lead free Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.064 grams Ordering Information (example) Packing code Packing code Part No. Package Packing (Green) S2AA SMA 1.8K / 7 REEL R3 R3G Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. S2 S2 S2 S2 S2 S2 S2 Symbol Units Parameter AA BA DA GA JA KA MA Maximum Recurrent Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS V Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 1.5 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 50 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.1 V F 1.5A 5 Maximum DC Reverse Current at T =25 uA A I R Rated DC Blocking Voltage T =125 125 uA A Typical Reverse Recovery Time (Note 2) 1.5 Trr uS Typical Junction Capacitance (Note 3) Cj 30 pF R 16 JL O Typical Thermal Resistance C/W R 53 JA O Operating Temperature Range T - 55 to + 150 C J O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied V =4.0 Volts R Version:H13RATINGS AND CHARACTERISTIC CURVES (S2AA THRU S2MA) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING 10 CURVE 2 TA=125 1.5 TA=100 1 1 RESISTIVE OR INDUCTIVE LOAD 0.5 0 50 60 70 80 90 10 0 11 0 12 0 13 0 14 0 15 0 0. 1 o LEAD TEMPERATURE ( C) FIG. 3- MAXIMUM NON-REPETITIVE FORWARD TA=25 SURGE CURRENT 50 0. 01 40 8.3mS Single Half Sine Wave 0 20 40 60 80 100 120 140 JEDEC Method PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 30 FIG. 5- TYPICAL FORWARD CHARACTERISTICS 20 10 10 TA=25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL JUNCTION CAPACITANCE 100 1 10 TA=25 TA=25 Pulse Width=300us f=1.0MHz 1% Duty Cycle Vsig=50mVp-p 0. 1 1 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 0. 1 1 10 100 FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) Version:H13 JUNCTION CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE URRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)