1SS360,LJ(CT Toshiba

1SS360 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application Unit: mm AEC-Q101 Qualified (Note1) Small package Low forward voltage : V = 0.92 V (typ.) F (3) Fast reverse recovery time : t = 1.6 ns (typ.) rr Small total capacitance : C = 2.2 pF (typ.) T Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 2 * A FSM P (Note 2, 4) 120 D Power dissipation mW P (Note 3) 100 D T (Note 2) 150 SSM j Junction temperature C T (Note 3) 125 JEDEC j JEITA T (Note 2) 55 to 150 stg Storage temperature C TOSHIBA 1-2S1A T (Note 3) 55 to 125 stg Weight: 2.4mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LJ(CT. Note 3: For devices with the ordering part number in other than LJ(CT. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.36 mm 3) *: Unit rating. Total rating = Unit rating 1.5. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.61 F (1) F Forward voltage V I = 10 mA 0.74 V F (2) F V I = 100 mA 0.92 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MH 2.2 4.0 pF T R z Reverse recovery time t I = 10 mA, Fig.1 1.6 4.0 ns rr F Start of commercial production 1990-10 2020-2021 2021-10-13 1 Toshiba Electronic Devices & Storage Corporation 1SS360 Marking Fig.1 Reverse recovery time (t ) test circuit rr 2020-2021 2021-10-13 2 Toshiba Electronic Devices & Storage Corporation