1SS403E Switching Diodes Silicon Epitaxial Planar 1SS403E1SS403E1SS403E1SS403E 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Ultra-High-Speed Switching 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Small package (2) Low reverse current. : I = 1.0 A (max) R(2) (3) Small total capacitance: C = 3.0 pF (max) t 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode ESC 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 250 V RM Reverse voltage V 200 V R Peak forward current I 300 mA FM Average rectified current I 100 mA O Non-repetitive peak forward surge current I (Note 1) 2 A FSM Power dissipation P (Note 2) 200 mW D Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Measured with a 10 ms pulse. Note 2: Mounted on a glass epoxy circuit board of 20 mm 20 mm, Pad dimension of 4 mm 4 mm. Start of commercial production 2017-11 2017-2018 2018-11-16 1 Toshiba Electronic Devices & Storage Corporation Rev.3.01SS403E 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 0.72 1.0 V F(1) F V I = 100 mA 0.90 1.2 F(2) F Reverse current I V = 50 V 0.1 A R(1) R I V = 200 V 1.0 R(2) R Total capacitance C V = 0 V, f = 1 MHz 3.0 pF t R Reverse recovery time t I = 10 mA 60 ns rr F See Fig. 5.1. Fig. 5.1 Reverse recovery time (trr) Test circuit Fig. Fig. Fig. 5.15.15.1 Reverse recovery time (tReverse recovery time (tReverse recovery time (trrrrrr) Test circuit) Test circuit) Test circuit Note: This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be using proper antistatic precautions for the worktable, operator, solder iron and so on. 6. 6. 6. 6. MarkingMarkingMarkingMarking 7. 7. 7. 7. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) (Unit: mm)(Unit: mm)(Unit: mm)(Unit: mm) 2017-2018 2018-11-16 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0