1SS406,H3F Toshiba

1SS406 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application Unit: mm z Low forward voltage : V = 0.50V (typ.) F (3) z Low reverse current : I = 0.5A (max) R z Small total capacitance : C = 3.9pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 25 V RM Reverse voltage V 20 V R Maximum (peak) forward current I 100 mA FM Average forward current I 50 mA O Surge current (10ms) I 1 A FSM USC Power dissipation P * 200 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-1E1A temperature/current/voltage and the significant change in Weight: 0.004g(Typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 20 mm, pad dimension of 4 4 mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.33 F (1) F Forward voltage V V I = 5mA 0.38 F (2) F V I = 50mA 0.50 0.55 F (3) F Reverse current I V = 20V 0.5 A R R Total capacitance C V = 0, f = 1MH 3.9 pF T R z Equivalent Circuit (Top View) Marking A7 Start of commercial production 2001-11 1 2014-03-01 1SS406 2 2014-03-01