2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mm Power Switching Applications High DC current gain: h = 100 to 320 FE Low saturation voltage: V = 0.4 V (max) CE (sat) (I = 500 mA, I = 20 mA) C B Suitable for driver stage of small motor Complementary to 2SC3265 Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 30 V CBO Collector-emitter voltage V 25 V CEO Emitter-base voltage V 5 V EBO Collector current I 800 mA C JEDEC TO-236MOD Base current I 160 mA B JEITA SC-59 Collector power dissipation P 200 mW C TOSHIBA 2-3F1A Junction temperature T 150 C j Weight: 0.012 g (typ.) Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Start of commercial production 1982-10 1 2014-03-01 2SA1298 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 30 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 50 V, I = 0 0.1 A EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 25 V (BR) CEO C B Emitter-base breakdown voltage V I = 0.1 mA, I = 0 5 V (BR) EBO E C h FE (1) V = 1 V, I = 100 mA 100 320 CE C (Note) DC current gain h V = 1 V, I = 800 mA 40 FE (2) CE C Collector-emitter saturation voltage V I = 500 mA, I = 20 mA 0.4 V CE (sat) C B Base-emitter voltage V V = 1 V, I = 10 mA 0.5 0.8 V BE CE C Transition frequency f V = 5 V, I = 10 mA 120 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 13 pF ob CB E Note: h classification O: 100 to 200, Y: 160 to 320 FE (1) 2 2014-03-01