2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: V = 300 V, V = 300 V CBO CEO Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacitance: C = 5.5 pF (typ.) ob Complementary to 2SC4497 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 300 V CBO Collector-emitter voltage V 300 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C JEDEC TO-236MOD Base current I 20 mA B JEITA SC-59 Collector power dissipation P 150 mW C Junction temperature T 150 C TOSHIBA 2-3F1A j Storage temperature range T 55 to 150 C stg Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Start of commercial production 1988-09 1 2014-03-01 2SA1721 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 300 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 0.1 A EBO EB C Collector-base breakdown voltage V I = 0.1 mA, I = 0 300 V (BR) CBO C E Collector-emitter breakdown voltage V I = 1 mA, I = 0 300 V (BR) CEO C B h FE (1) V = 10 V, I = 20 mA 30 150 CE C (Note) DC current gain h V = 10 V, I = 1 mA 20 FE (2) CE C Collector-emitter saturation voltage V I = 20 mA, I = 2 mA 0.5 V CE (sat) C B Base-emitter saturation voltage V I = 20 mA, I = 2 mA 1.2 V BE (sat) C B Transition frequency f V = 10 V, I = 20 mA 50 55 MHz T CE C Collector output capacitance C V = 20 V, I = 0, f = 1 MHz 5.5 6.0 pF ob CB E Note: h classification R: 30 to 90, O: 50 to 150 FE (1) 2 2014-03-01